ntjd5121n power mosfet 60 v, 295 ma, dual n-channel with esd protection, sc-88 features ? low r ds(on) ? low gate threshold ? low input capacitance ? esd protected gate ? this is a pb-free device applications ? low side load switch ? dc-dc converters (buck and boost circuits) maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain-to-source voltage v dss 60 v gate-to-source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 295 ma t a = 85 c 212 t 5 s t a = 25 c 304 t a = 85 c 219 power dissipation (note 1) steady state t a = 25 c p d 250 mw t 5 s 266 pulsed drain current t p = 10 s i dm 900 ma operating junction and storage temperature t j , t stg -55 to 150 c source current (body diode) i s 210 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c gate-source esd rating (hbm, method 3015) esd 1400 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol value units junction-to-ambient C steady state r ja 500 c/w junction-to-ambient C t 5 s r ja 470 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). top view http://onsemi.com sc-88 (sot-363) d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 v (br)dss r ds(on) max i d max 60 v 1.6 @ 10 v 2.5 @ 4.5 v 295 ma d 2 device package shipping ? ordering information NTJD5121NT1G sc-88 (pb-free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. marking diagram & pin assignment tf m 1 6 1 tf = device code m = date code = pb-free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) sc-88/sot-363 case 419b style 26 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 92 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a t j = 125 c 500 gate-to-source leakage current i gss v ds = 0 v, v gs = 20 v 10 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 1.7 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain-to-source on resistance r ds(on) v gs = 10 v, i d = 500 ma 1.0 1.6 v gs = 4.5 v, i d = 200 ma 1.2 2.5 forward transconductance g fs v ds = 5 v, i d = 200 ma 80 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 20 v 26 pf output capacitance c oss 4.4 reverse transfer capacitance c rss 2.5 total gate charge q g(tot) v gs = 4.5 v, v ds = 25 v, i d = 200 ma 0.9 nc threshold gate charge q g(th) 0.2 gate-to-source charge q gs 0.3 gate-to-drain charge q gd 0.28 switching characteristics (note 3) turn-on delay time t d(on) v gs = 45 v, v dd = 25 v, i d = 200 ma, r g = 25 22 ns rise time t r 34 turn-off delay time t d(off) 34 fall time t f 32 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.8 1.2 v t j = 85 c 0.7 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ntjd5121n product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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